An Optimization Framework for GaN Power Device Design and Applications
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)(2019)
摘要
In this work, an optimization framework is discussed that combines device focused TCAD simulation with a circuit simulation platform. First a method to instantiate a TCAD device model into a circuit simulator is devised and proofed. Second, a closed loop optimization architecture is developed to simulate candidate device designs in TCAD software, instantiate them into a circuit simulator to test an application, and refine the design of the device based on its relative performance. To the authors' knowledge, this is the first demonstration of such a system for power electronics applications. This system was demonstrated using Sentaurus TCAD and the circuit simulation platform SaberRD. To show the efficacy of this method, the gate-drain length and AlGaN barrier doping concentration of a theoretical pGaN-gated GaN HEMT was optimized to reduce the energy loss of a boost converter. This method showed a 42.7% decrease in energy loss between the best initial and the final device design.
更多查看译文
关键词
Power transistors,Gallium nitride,Capacitance-voltage characteristics,Semiconductor device modeling,TCAD
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要