Vertical GaN Superjunction FinFET - A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching

Ming Xiao
Ming Xiao
Ruizhe Zhang
Ruizhe Zhang
Garrett Schlenvogt
Garrett Schlenvogt
Thomas Jokinen
Thomas Jokinen

DRC, pp. 161-162, 2019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/DRC46940.2019.9046481
EI
Other Links: dblp.uni-trier.de|academic.microsoft.com

Abstract:

Suneriunction (SJ) devices could break the theoretical trade-off between breakdown voltage $(V_{\mathrm{B}})$ and on-resistance $(R_{\mathrm{o}\mathrm{n}})$ in conventional power devices, and allow for a much smaller $R_{\mathrm{o}\mathrm{n}}$ for the same $V_{\mathrm{B}}$ [1]. Si SJ MOSFETs have achieved a huge commercial success...More

Code:

Data:

Your rating :
0

 

Tags
Comments