Back-Side-on-BOX Heterogeneously Integrated III-V-on-Silicon O-Band Distributed Feedback Lasers

We introduce a new III-V-on-Silicon (Si) heterogeneous integration platform, where the III-V material is bonded to the back of a processed Si photonic wafer. This “Back-Side-on-Buried Oxide” (BSoBOX) process is fully compatible with active, multilayer Si photonics platforms. This article describes the process flow and reports on O-band hybrid distributed feedback (DFB) lasers of various grating pe...