Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

Semiconductors(2020)

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摘要
The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generation EPR spectrometer operating in the continuous wave and pulsed modes at frequencies of 94 and 130 GHz in a wide range of magnetic fields (–7–7 T) and temperatures (1.5–300 K). A magneto-optical closed-cycle cryogenic system (Spectormag PT), highly stable generators (94 and 130 GHz), and a cavity-free system for supplying microwave power to the sample are used.
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关键词
electron paramagnetic resonance,electron spin echo,semiconductors,silicon carbide,donor impurities
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