Reconfigurable logic gates in nanowires with Rashba spin-orbit interaction

Two configurations are proposed for the implementation of several logic gates in ballistic nanowires with Rashba spin-orbit interaction. The logic states are encoded in Rashba coefficients/applied gate voltages on up to three regions surrounded by areas with no spin-orbit coupling. In this way, only one spin-polarized current is needed in order to implement multiple-bits gates, minimizing the technological difficulties currently associated to spintronic devices.