Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

H. Ghanem,Joao Carlos Azevedo Goncalves,Pascal Chevalier,Issa Alaji,Walid Aouimeur,Sylvie Lepilliet,Daniel Gloria,Christophe Gaquiere,Francois Danneville,G. Ducournau

IEEE Transactions on Microwave Theory and Techniques（2020）

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摘要

In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on...

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关键词

Schottky diodes,Impedance,Electrical resistance measurement,Silicon,Noise measurement,Impedance measurement,Size measurement

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