A Low-Temperature Nickel Silicide Process for Wafer Bonding and High-Density Interconnects

Wafer-scale heterogeneous integration provides a viable pathway for the development of highly capable microsystems. However, it remains challenging to integrate die-and wafer-level components with a high-density interconnects while minimizing the system volume and within the temperature restrictions imposed by integrated circuits. Advancements in CMOS have motivated the development of low-temperat...