A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance

This article proposes a new idea to improve the $\text{d}{I}/\text{d}{t}$ and $\text{d}{V}/\text{d}{t}$ controllability of the lateral insulated gate bipolar transistor (LIGBT). By employing an inversion layer thyristor T to enhance the conductivity modulation and applying the startup nMOS M ₄ with small Miller capacitance, the proposed LIGBT not only realizes low saturation current, but also eliminates the Miller plateau. The simulation results demonstrate that the saturation current with a value of 682 A/cm ² is reduced by 55.5%, and the short-circuit time is improved by 375% in comparison with that of the self-adjust conductivity modulation LIGBT (SCM-LIGBT) silicon-on-insulator LIGBT (SOI-LIGBT). Especially, the $\text{d}{V}/\text{d}{t}$ and $\text{d}{I}/\text{d}{t}$ controllability are improved by 21% and 49%, respectively, since the Miller plateau is basically eliminated.