Angstrom-Resolved Interfacial Structure In Buried Organic-Inorganic Junctions

PHYSICAL REVIEW LETTERS(2021)

引用 11|浏览81
暂无评分
摘要
Charge transport processes at interfaces play a crucial role in many processes. Here, the first soft x-ray second harmonic generation (SXR SHG) interfacial spectrum of a buried interface (boron-Parylene N) is reported. SXR SHG shows distinct spectral features that are not observed in x-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9 angstrom, with changes of less than 1 angstrom resulting in easily detectable SXR SHG spectral shifts (ca. hundreds of milli-electron volts).
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要