Impact of Traps on the Adjacent Channel Power Ratios of GaN HEMTs

In this work, the impact of traps on a system level parameter, ACPR (adjacent channel power ratio), of commercial RF AlGaN/GaN HEMTs were studied. ACPR usually depends on the transistor linearity and stability, and in this study it was measured in two different signal duplexing schemes: time division duplexing (TDD) and frequency division duplexing (FDD) after using digital predistortion to minimi...