Regrowth-free GaN-based Complementary Logic on a Si Substrate

This paper demonstrates a complementary logic circuit (an inverter) on a GaN-on-Si platform without the use of regrowth technology. Both n-channel and p-channel GaN transistors are monolithically integrated on a GaN/AlGaN/GaN double heterostructure. N-channel FETs show enhancement-mode (E-mode) operation with a threshold voltage around 0.2 V, ON-OFF current ratio of 107 and RON of 6 Ω · mm, while ...