Impact of high-temperature implantation of Mg ions into GaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 2020.

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Abstract:

Magnesium (Mg) ion implantation into gallium nitride (GaN) at 1000 degrees C is proposed. Since ion implantation and annealing occur simultaneously in high-temperature implantation, it is considered that Mg ions can be introduced at an appropriate position upon their implantation. GaN vertical diodes implanted with Mg ions were fabricated...More

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