Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTOfilms grown at 100 degrees C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (similar to 85%), and most favorable p-type conductivity (hole concentration of similar to 10(15) cm(-3)), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to-OFF current ratio of similar to 1.2 x 10(5), the threshold voltage of -2.3 V, the field-effect mobility of 1.37 cm(2)/Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processesmay open the door for practical applications in transparent and flexible electronics.