Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor

The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors employ an additional n-type implant in pixel which allows full depletion to be achieved by reverse biasing the substrate and have been irradiated alongside reference devices in which the implant has been omitted. The results show no visible d...