Hopping Thermoelectric Power in TlCrS2

— The low-temperature (80–190 K) thermoelectric power of TlCrS 2 has been shown to follow the relation α( T ) = (0.2 T – 13) μV/K, characteristic of charge transport through localized states in the band gap. As the temperature is raised from 338 to 370 K, where the electrical conductivity is dominated by charge carriers excited to the allowed band, the thermoelectric power varies of TlCrS 2 is inversely proportional to temperature. The temperature coefficient of the activation energy for conduction in TlCrS 2 is γ = 2.06 × 10 –4 eV/K. We have determined parameters of localized states in TlCrS 2 .