Sub-megahertz linewidth 780.24  nm distributed feedback laser for 87 Rb applications.

OPTICS LETTERS(2020)

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摘要
A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wave-length of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used. to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with >0.3 nm of tuning suitable for atom cooling experiments with the D2 Rb-87 atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
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