Electronic Supplementary material ( ESI ) for Replacement of n-type layers with non-toxic APTES interfacial layers to improve the performance of amorphous Si thin-film solar cells

semanticscholar(2019)

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摘要
1Division of Display and Semiconductor Physics, Display Convergence, College of Science and Technology, Korea University Sejong Campus 2511 Sejong-ro, Sejong City, 30019, Republic of Korea 2Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea 3Advanced Nano-Surface Department, Korea Institute of Materials Science (KIMS) Changwon, 51508, Republic of Korea
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