Development of Semiconductor Lasers Capable of 10-Gbit/s Direct Modulation at Wide Temperature Ranges

Recent rapid growth in information traffic requires high density transmission for access network systems, where optical transceivers capable of high temperature operation with low power dissipation are indispensable. The 10Gbit/s uncooled directly modulated laser diode (DML) is a key device in the transceivers, and much development has been focused on its high bitrate operation at high temperature. Furthermore, development of 25-Gbit/s DML has been also advanced aggressively these days (1)-(3), as 25Gbit/s DML is expected to be a low-cost light source for the 100-Gbit/s network by 4 wavelength division multiplexing (WDM), like the 100 Gigabit Ethernet (100GbE) (4). For 25-Gbit/s DML, high speed and high temperature operation is more important than before. In this paper, we report on our 1.3-μm wavelength DFB laser diode, and show its high performance of 10Gbit/s operation over a wide temperature range. 25-Gbit/s operation is also demonstrated.