Electrical Characterization of PZT Dielectric Thick Film with varying Zr/Ti ratios Developed by SOL GEL Technique

After being reported about various parametric changes in piezoelectric coefficient, polarization and dielectric constant K by addition of some foreign ions; a new dimension was added in classifying PZT composite material as hard and soft doped. As reported by various researchers across the globe, soft PZTs have highly enhanced piezoelectric properties which makes them highly suitable for fabrication of various electrical and electronic devices owing to high gain and better response, but on the other hand hard PZTs are reported to have highly decreased dielectric constants and piezoelectric coefficients leading their incapability to serve as an effective material for fabrication of actuators. However a considerable linearity in the variation of K is reported in these hard doped materials, which can indirectly be utilized for other low gain and low response systems. In the presented work, the author investigates the nature of variation in Curie lattice parameters and dielectric constant composite material Pb[Zrx,Ti(1x)]O3, for x=0.6, 0.7and 0.8; furthermore the effect of hard dopant Mg+2, on the composite material is investigated providing mathematical results which are in coherence with the pre established theory.