PIC Fabrication Platforms for SOI and Si 3 N 4 in a Flexible Photonic Foundry Concept

Anna Lena GIESECKE*, Jens BOLTEN, Thorsten WAHLBRINK, Piotr CEGIELSKI, Caroline PORSCHATIS, Daniel SCHALL, Bartos CHMIELAK, Andreas PRINZEN, Holger LERCH, Herbert KLEINJANS AMO GmbH, Otto-Blumenthal-Str. 25, Aachen, 52074, Germany * giesecke@amo.de We provide unique highly flexible fabrication platforms for integrated photonic circuits based on SOI and Si3N4 from design to fabrication and characterization of the manufactured devices. The schematic in Fig. 1 depicts different options of our technology platforms. The accessibility of both platforms permits applications from telecom wavelengths to the NIR and visible range, hence the devices are suitable for communication as well as for sensing. AMO has been developing the SOI platform for photonic applications for more than one decade. Waveguide losses and grating couplers have been optimized for both telecom wavelength ranges around 1310 nm and 1550 nm. Critical passive structures such as directional couplers and ring resonators can be fabricated with high precision (Fig. 2b), g)). The passive platform is completed with efficient grating couplers (Fig. a)) (2.5 dB loss) and edge coupling through spot-size converters. In order to maximize the yield of our SOI-based photonic devices fabrication tolerances have been intensively studied and device design as well as processes both for the lithographic definition and for the pattern transfer via reactive ion etching have been optimized accordingly [1].