Manual Stanford 2 D Semiconductor ballistic ( S 2 DSb ) model Version 1 . 00

The physics-based Stanford 2D semiconductor model (S2DS) [1], [2] assume driftdiffusion transport and is suitable for large channel (L > 100 nm) 2D devices. Recent experimental development [3] in fabricating short channel MoS2 devices (L ~ 10 nm) has directed us to develop a new model suitable for the quasi-ballistic region of operation. Unlike, S2DS model for 2D FET [1], [2], S2DSb model (‘b’ to indicate the alternate version of the S2DS model and support for ballistic transport) will be suitable for quasi-ballistic single-layer 2D (MoS2) transistor.