SINGLE CRYSTALS OF SILICON AND III-Vs MULTI-CRYSTALLINE SILICON FOR PV OXIDE CRYSTAL GROWTH WIDE BANDGAP SEMICONDUCTOR GROWTH EMERGING FIELDS IN CRYSTAL GROWTH

Diglycine zinc chloride, a semi-organic nonlinear optical crystal was grown by conventional slow evaporation solution method and Sankaranarayanan-Ramasamy method. By employing this unidirectional method, diglycine zinc chloride single crystals of diameters 10 mm, 30 mm and length upto 60 mm were grown. The growth conditions and growth rate have been optimized. A maximum growth rate of 1.5 mm per day was observed. A comparative damage threshold analysis made on the diglycine zinc chloride crystals by conventional and unidirectional method shows that the crystal grown by Sankaranarayanan-Ramasamy method has higher damage threshold. The conventional and Sankaranarayanan-Ramasamy method grown diglycine zinc chloride crystals were also characterized by chemical etching, UV-Vis analysis, dielectric constant, dielectric loss, Vicker’s microhardness analysis and the results were compared. The present study indicates that the crystal quality of Sankaranarayanan-Ramasamy method grown diglycine zinc chloride is good compared to conventional slow evaporation method grown crystal.