Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

Muhammad Ali Johar
Muhammad Ali Johar
Aadil Waseem
Aadil Waseem
Mostafa Afifi Hassan
Mostafa Afifi Hassan
Indrajit V Bagal
Indrajit V Bagal
Ameer Abdullah
Ameer Abdullah

ACS omega, pp. 17753-17760, 2020.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1021/acsomega.0c02411
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline...More

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