Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
ACS omega, pp. 17753-17760, 2020.
Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline...More
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