Self-Aligned AlGaN/GaN FinFETs

We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressively scaled, with fin widths, gate length, and source drain spacing as small as 50,60, and 200 nm, respectively.DC characteristics, when normalized to ...