A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Rongxin Chen,Hao Hu,Yuan Lin,Xing Bi Chen

IEEE Journal of the Electron Devices Society（2020）

引用 3|浏览4

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摘要

A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on...

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关键词

Anodes,Cathodes,Junctions,Insulated gate bipolar transistors,Current density,Logic gates,Electric fields

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