Temperature Dependence Of Single-Event Transient Pulse Widths For 7-Nm Bulk Finfet Technology

Single-Event Transients (SETs) are a dominant determinant of Soft-Error Rates (SER) for CMOS circuits. In this paper, effects of elevated temperature and supply voltages on SET pulse widths are analyzed for a 7-nm bulk FinFET technology for alpha particle exposures. Experimental results indicate that SET pulse widths at the 7-nm node strongly depend on temperature, and the different charge collection mechanisms, including charge drift and charge diffusion, are key factors affecting the SET pulse widths.