Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact

Hyun Kyong Cho,Norman Susilo,Martin Guttmann,Jens Rass,Ina Ostermay,Sylvia Hagedorn,Eviathar Ziffer,Tim Wernicke,Sven Einfeldt,Markus Weyers,Michael Kneissl

IEEE Photonics Technology Letters（2020）

引用 12|浏览22

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摘要

P-type contacts with a high reflectivity in the ultraviolet spectral region made of molybdenum/aluminum (Mo/Al) on AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) emitting at 265 nm have been investigated. Optimized Mo/Al contacts are shown to have a high optical reflectivity above 75% at 265 nm. DUV LEDs with an absorbing p-AlGaN heterostructure operated at 20 mA show a 15% higher l...

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关键词

Light emitting diodes,Reflectivity,Indium tin oxide,Annealing,Semiconductor device measurement,Aluminum gallium nitride

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