A K /Ka Band 21.4 dBm Power Amplifier with Four Way Twisted Combiner in SiGe BiCMOS

Toward high output power and wide bandwidth power amplifier (PA) design in BiCMOS for 5G communication, this paper introduces a four-way transformer-based power combiner. Moreover, in order to reduce the energy leak of high power amplifier, both output power combiner and input splitter are adopted twisted eight-shaped transformer structure. Besides, compared to conventional eight-shaped transformer, this structure has better input impedance uniformity. The PA electromagnetic simulation results demonstrate 23 dB small-signal gain, 28.1% power added efficiency (PAE), 20.3 dBm 1-dB compression point output power (OP 1dB ), 21.4 dBm saturated output power (OP sat ). This PA has 13 GHz 3-dB bandwidth (25 to 38 GHz) with a core area of 0.344 mm 2 ( ).