Modeling of III-V-based Nanohole Filling

It is well-known, that several areas of science (for example electronics) have been revolutionized by the application of nano structures. For this reason, it is important to simulate the evolution of these nano structures. The III-V-composite semiconductor based nanohole backfilling is modeled in this paper. The backfilling is described with the viscosity of the liquid gallium, instead of modeling of the real atomic displacements. The construction of the model begins with the macroscopic interpretation of the viscosity. In order to model the atomic displacement at microscopic level, the microscopic viscosity was introduced. It is shown, that under certain conditions we get back the original Arrhenius-Andrande equation from the microscopic viscosity model. During the simulation, both the viscosity and the equilibrium height of the backfilled nanohole was determined as a function of temperature.