Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs

Eric M. Vogel,A. M. Sonnet,R. V. Galatage,M. Milojevic,C. L. Hinkle,R. M. Wallace

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT（2010）

引用 2|浏览3

暂无评分

摘要

The electrical and physical properties of high-k gate dielectrics on InxGa1-xAs with different surface passivation techniques have been studied. A model based on disordered-induced gap states is described which explains the frequency dispersion behavior observed in capacitance-voltage measurements. InxGa1-xAs MOSFETs with different ex-situ surface passivation techniques and HfO2 gate dielectric were fabricated and characterized. The results of transport characteristics are compared and correlated to associated physical measurements.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要