Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory

2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019.

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Abstract:

Silicon selective epitaxial growth (Si-SEG) plays an important role in 3D NAND memory because it switches on/off current in vertical channels (VC). In this study, a damaged layer containing carbon (C), fluorine (F), oxygen (O) impurities was detected after VC etch. It severely impacts the Si-SEG quality and results in large Si-SEG height ...More

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