Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory
2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019.
Silicon selective epitaxial growth (Si-SEG) plays an important role in 3D NAND memory because it switches on/off current in vertical channels (VC). In this study, a damaged layer containing carbon (C), fluorine (F), oxygen (O) impurities was detected after VC etch. It severely impacts the Si-SEG quality and results in large Si-SEG height ...More
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