Interface type atomic memristor and preparation method thereof

The invention discloses an interface type atomic memristor and a preparation method thereof. The memristor structurally comprises a sandwich structure with a bottom electrode/dielectric layer/top electrode on a substrate and a protective layer at the topmost part, the bottom electrode is made of inert metal materials such as platinum, gold and palladium, and flexible conductive materials such as indium tin oxide, graphene and other semimetal type two-dimensional atomic crystal materials or semiconductor type two-dimensional atomic crystals. The top electrode is made of active metal materials such as silver, copper, titanium, tungsten and titanium nitride; the dielectric layer is composed of a two-dimensional atomic crystal material, and the surface of the two-dimensional atomic crystal material is subjected to oxidation treatment; the substrate comprises silicon oxide, silicon nitride, aluminum oxide, polyimide or polydimethylsiloxane. The memristor provided by the invention has the characteristics of large switching ratio, low switching voltage, stable resistance state and excellent cycle durability by utilizing the atomic-level interface effect of the specific two-dimensional atomic crystal surface oxide layer and the active metal top electrode and has a wide application prospect.