Manufacturing method of oriented nano fiberized three dimensional stereoscopic interdigital electrode of semiconductor gas sensitive sensor

The invention relates to semiconductor gas-sensitive sensor technology, and discloses a manufacturing method of an oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of a semiconductor gas-sensitive sensor. The method comprises the following steps: firstly transferring a pattern of an interdigital electrode to a photoresist layer by a traditional photoetching process, etching a monocrystalline silicon substrate by a dry method with the photoresist layer as a mask so as to prepare oriented nano-fibers, sputtering a layer of Pt as a conducting layer on the fiber surfaces by a magnetron sputtering process, and finally peeling off the photoresist layer by a chemical method to obtain the oriented nano-fiberized three-dimensional stereoscopic interdigital electrode ofa semiconductor gas-sensitive sensor. Compared with traditional plate interdigital electrodes, the oriented nano-fiberized three-dimensional stereoscopic interdigital electrode contains silicon nanofibers with high specific surface areas which can effectively increase the surface area of the electrode without decreasing interdigital pair numbers, thus can effectively increase the sensitivity of the sensitive electrode, and solves the contradictory relation between the interdigital pair numbers of traditional plate interdigital electrodes and surface areas.