The band alignment of nonpolar m-plane ZnO1-xSx/Mg0.4Zn0.6O heterojunctions
AIP ADVANCES(2020)
摘要
Heterostructures such as heterojunctions, quantum wells, and superlattices are core components of advanced optoelectronic devices. Herein, we attempted the first investigations on the band alignment of nonpolar m-plane oriented ZnO1-xSx/Mg0.4Zn0.6O heterojunctions by X-ray photoelectron spectroscopy. All the heterojunctions were revealed to show a type-I band alignment, and the valence band offset (VBO; Delta E-V) increased significantly, while the conduction band offset (Delta E-C) decreased insignificantly with increasing S content in the ZnO1-xSx layer. Specifically, for the ZnO1-xSx/Mg0.4Zn0.6O heterojunctions with x = 0, 0.13, and 0.22, Delta E-V (Delta E-C) was determined to be 0.24 (0.22), 0.61 (0.17), and 0.79 (0.11) eV, respectively. The VBOs of ZnOS/MgZnO heterojunctions are significantly larger than those of heterojunctions involving only cation-substituted alloys (ZnO/MgZnO or ZnO/CdZnO) due to the opposite shift in the VB maximum of ZnOS and MgZnO with respect to ZnO. Knowing band alignment parameters of the ZnOS/MgZnO interface can provide a better understanding of the carrier transport mechanism and rational design of ZnO-based optoelectronic devices. (C) 2020 Author(s).
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