Realized high power factor and thermoelectric performance in Cu3SbSe4

We report the realization of high thermoelectric performance in Cu3SbSe4-based materials through Sn-doping and inclusion of Cu3Sb0.94Sn0.06Se2.5S1.5 nanostructure. This significant enhancement in thermoelectric performance is attributed to simultaneous modulation of the electrical and thermal transport. Sn doping can reduce electrical resistivity, maintaining its high power factor. Cu3Sb0.94Sn0.06Se2.5S1.5 nanoparticles dispersed in the matrix can strengthen interface scattering at the phase boundaries, which can effectively scatter the heat-carrying phonons and thus yielding low lattice thermal conductivity. As a result, the figure of merit reaches ∼0.87 at 673 K for Cu3Sb0.96Sn0.04Se4–3% Cu3Sb0.94Sn0.06Se2.5S1.5.