Investigations of chemical and atomic composition of native oxide layers covering SI GaAs implanted with Xe ions

Semi-insulating (100) oriented GaAs was irradiated with 250 keV Xe+ ions with different fluences. The native oxide layers formed in the air after implantation are investigated in this study. The surface density of atoms in the native oxide layer, determined using Rutherford backscattering spectroscopy with nuclear reaction (RBS/NR), increases with ion fluence in the range between 2 × 1013 cm−2 and 8 × 1014 cm−2. Using X-ray photoelectron spectroscopy (XPS) method, the chemical composition was analyzed. It has been found that the native oxide layer on GaAs samples is a mixture of Ga2O3, As2O3, As2O5 and GaAs compounds and the compounds concentration changes depend on ion fluences.