Transfer-Free, Large-Scale, High-Quality Monolayer Graphene Grown Directly Onto The Ti (10 Nm)-Buffered Substrates At Low Temperatures
KOREAN JOURNAL OF MATERIALS RESEARCH(2020)
摘要
Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 degrees C and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 x 4 cm(2) scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 degrees C growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 cm(2)/Vxs, and a sheet resistance of 98 W/square. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.
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关键词
graphene, transfer free, Ti buffer layer, low temperature growth, large-scale growth
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