Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology

Jung Chien Cheng, Jia En Lee,Bing Yue Tsui

Solid-State Electronics（2020）

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摘要

•LOCOSiC isolation using PAI technology is integrated into the 4H-SiC SBD fabrication.•Smooth topography of LOCOSiC suppresses the leakage induced by field crowding along perimeter.•Thermally grown FOX possessed of better quality sustains higher VBD only with simple field plate termination.

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关键词

Silicon carbide (SiC),Schottky barrier diodes (SBDs),Isolation technology,Local oxidation of SiC (LOCOSiC)

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