Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes

Jérémy Blond,Abdelkader Aliane,Jérôme Meilhan,Hacile Kaya, Stéphane Litaudon,Laurent Dussopt

Solid-State Electronics（2020）

引用 6|浏览9

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摘要

•Thermal behaviour of 50-nm-thick SOI lateral diodes is presented.•Room temperature operation and cryogenic regime at 80 K were both studied.•TCC is extracted from both simulated and experimental I-V-T curves.•Schottky PtSi/n-Si and implanted p-i-n diodes are compared.

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关键词

SOI,Lateral diodes,p-i-n diode,Schottky Barrier Diode,Thermometer,Bolometer

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