Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs

Chika Tanaka,Yasuhiko Iguchi, Atsushi Sueoka,Sadayuki Yoshitomi

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)（2020）

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摘要

The cutoff frequency fluctuation in RF-MOSFET has been investigated. Detailed analysis for capacitance fluctuation as well as the extraction of an intrinsic MOSFET parameter were performed. The extracted process parameters were verified by the framework of effective mobility. The global statistical model of cutoff frequency was successfully developed in terms of capacitance fluctuation, considering intrinsic (channel and bulk charge) and extrinsic (overlap and fringe) capacitance components separately and identifying the major variability sources for cutoff frequency by using extracted parameter.

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关键词

capacitance fluctuation,intrinsic MOSFET parameter extraction,extracted process parameters,global statistical model,extracted parameter,novel statistical modeling,RF-MOSFET,cutoff frequency fluctuation,effective mobility,extrinsic capacitance components,major variability sources

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