Material Innovation in the Era of Artificial Intelligence - A Case Study of Hf-Zr Systems

Dina H. Triyoso,Robert D. Clark,Steven Consiglio,Kandabara Tapily,Hisashi Higuchi,Takahiro Hakamata, Danny Newman, Sophia Rogalskyj,Christopher Cole,Angelique Raley,Cory Wajda,Gert Leusink

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2020）

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摘要

In this work, we presented the Hf-Zr system as a case study of materials that were evaluated in the past and are now receiving renewed interest due to its potential use in artificial intelligence (AI). A historical overview of Hf-Zr research and its promising new applications for emerging memories will be shared.

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artificial intelligence,emerging memories,RRAM,FRAM,capacitor,ferroelectric,HfZrO,new materials

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