Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
arxiv(2020)
摘要
We present a detailed experimental optical study supported by theoretical
modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier
lattice-matched to InP(001) grown with the use of a ripening step in molecular
beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low
surface density, characterized by a multimodal size distribution resulting in a
spectrally broad emission in the range of 1.4-2.0 μm, essential for many
near-infrared photonic applications. We find that, in contrast to the InAs/InP
system, the multimodal distribution results here from a two-monolayer
difference in QD height between consecutive families of dots. This may stem
from the long-range ordering in the quaternary barrier alloy that stabilizes QD
nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally
broad emission, we find a nearly dispersionless value of 1.3±0.3 ns.
Finally, we examine the temperature dependence of emission characteristics. We
underline the impact of localized states in the wetting layer playing the role
of carrier reservoir during thermal carrier redistribution. We determine the
hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in
these QDs.
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