BSIM-IMG102. 7.0 Independent Multi-Gate MOSFET Compact Model

The continuous evolution and enhancement of bulk CMOS technology has fueled the growth of the microelectronics industry over the past several decades. When we reach the end of the technology roadmap for the classical CMOS, multiple gate CMOS structures will likely take up the baton. We have developed a multiple gate MOSFET compact model for technology/circuits development in the short term and for product design in the longer term. Several different multi-gate (MG) structures and two different modes of operation are being pursued in the industry today. In the case of planar double gate (Figure 1), the two gates will likely be asymmetric–having different work functions and dielectric thicknesses, complicating the compact model. Also, the two gates are likely to be biased at two different voltages, and these gates are called independent gates. In the other double, triple, or all-around gate cases, the gates are …