Characterization of Cu2ZnSnS4 Thin Film Deposited by Pulse Laser Deposition

Thin film of Cu2ZnSnS4 (CZTS) was deposited on Si(100) substrate by Pulse Laser Deposition (PLD) technique. The deposition was done in vacuum at 450 degrees C. The formation of CZTS kesterite structure was confirmed by using XRD diffraction and Raman spectroscopy. The morphology and the elemental distribution of the obtained film were investigated by SEM and STEM mapping. The micrograph shows a polyhedral nanograin shape densely packed and the constituent elements are homogeneous distributed in deposited thin film. The reflectance spectrum show maximum and minimum of interference which indicates that the thin film is uniform in thickness and its surface is flat. The band gap value E-g=1.5 eV was determined from reflectance and PL spectra.