STUDY OF O-SI(CH3)3 BOND BREAKING REACTIONS IN SILYLATED POLYMERS ON THIN-LAYER BY UV - VISIBLE IRRADIATION IN PRESENCE OF TRIPHENYLSULFONIUM SALTS CONTAINING OR NOT PERYLENE

This paper describes a positive resist formulation containing silylated polystyrene polymer, made photosensitive at wavelengths from 220 to 310 nm by means of an onium salt sensitizer ((C6H5)3SMXn) and at wavelengths from 360 to 450 nm by means of an onium salt and a dye photosensitizer (perylene). In the present study, we report the desilylation of acid-sensitive polymers as poly (4-trimethylsiloxystyrene) or poly [p-trimethylsiloxystyrene-co-p-(tert-butoxycarbonyl) oxystyrene]. The formed Bronsted acid which induces the cleavage of silicon - containing side groups is HMXn. The transformation reaction is followed by IR spectroscopy before and after exposure. This resist system is resistant to etching in an oxygen plasma.