Nanocrystalline Beta-Sic Films Grown by Cat-Cvd with Precarbonization Process

Nanocrystalline cubic SiC (beta-SiC) films were grown on silicon (100) substrate by catalytic chemical vapor deposition (Cat-CVD) at a temperature as low as 300 degrees C with a pre-carbonization process. To enhance nucleation density of beta-SiC, a buffer layer was made by carbonizing the substrate surface. From the comparison between both carbonized sample and non-carbonized sample, the precarbonization process has beneficial effects on the growth of nanocrystalline beta-SiC films. Mechanistic interpretations are given to explain the carbonization process and catalyzing deposition process.