Characteristics of CIGS thin films grown by downward co-evaporation using downward effusion cells

We present Cu(In, Ga) Se-2 (CIGS) thin films grown by downward co-evaporation using a downward effusion cell. CIGS thin films were prepared using the three-stage process. A composition monitoring technique was used to precisely control the relative composition of Cu, In, Ga, and Se. In this study, the vapor pressures were measured and controlled using a vapor fluxmeter. The vapor pressures of Cu, In, Ga, and Se were similar to 3.1 x 10(-5) to 4.2 x 10(-5), similar to 1.3 x 10(-4) to 2.0 x 10 -4, similar to 2.0 x 10(-5) to 3.7 x 10(-5), and 3.8 x 10(-4) Pa, respectively. With Cu/(In + Ga) similar to 0.9 and Ga/(In + Ga)similar to 0.3, the Al/ZnO/CdS/CIGS/Mo/soda lime glass (SLG) solar cell demonstrated a conversion efficiency above 12%. The ZnS/CIGS solar cells were fabricated, and their photovoltaic properties were characterized. The characteristics of the CIGS thin films were investigated using X-ray diffraction (XRD) to determine their photovoltaic properties. The construction of the downward co-evaporation system for CIGS thin-film solar cells was completed and performance tested.