Ultra high hole mobility in Ge films grown directly on Si (1 0 0) through interface modulation

•Ultra high hole mobility Ge films were grown on Si (100) by MBE.•TDD can be greatly reduced from 109 cm−2 to 107 cm−2 by in-situ annealing treatments.•The room temperature mobility 1252 cm2/V·s is achieved.•The 90° periodic interfacial misfit arrays are achieved at the Ge/Si interface.