Electrical properties of thin films deposited from TMS/O-2 in Microwave Multipolar Plasma reactor

Thin films have been deposited from pure Tetramethylsilane and a mixture of Tetramethylsilane and oxygen (TMS/O-2). The addition of oxygen proportion to Tetramethylsilane vapors leads to the change in film structure which varies from organic to inorganic character close to SiOx-like film [1]. The electrical characterisation using Metal Insulating-Metal structure permits the study of current-voltage (I (V)) curves behaviours. The results suggest that the carrier transport in the deposited films is limited by a space charge conduction mechanism.