Optimization of Double Gate Vertical Channel Tunneling Field Effect Transistor (DVTFET) with Dielectric Sidewall

Xiangyu Wang
Xiangyu Wang
Wonhee Cho
Wonhee Cho

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, no. 2 (2017): 192-198

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Abstract:

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage (V-amb) and double gate structure is applied to improve on-current (I-ON) and subthreshold...More

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